publication date : oct 2011 1 outline drawing 0.2+/-0.05 0 . 2 + / - 0 . 0 5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):center value unit:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 . 0 + / - 0 . 0 5 (0.25) 2 3 1 3 . 5 + / - 0 . 0 5 2 . 0 + / - 0 . 0 5 (0.25) ( 0 . 2 2 ) ( 0 . 2 2 ) < silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w description rd02mus1b is a mos fet type transistor specifically designed for v hf /uhf rf power amplifiers applications. rd02mus1b improv ed a drain surge than rd02mus1 by optimiz ing mosfet structure. features high power g ain: pout> 2 w, gp>1 6 db @vdd= 7.2 v,f= 175mhz , 520mhz high efficiency: 65%typ. ( 175mhz) high efficiency: 65%typ. ( 520mhz) application for output stage of high power amplif iers in v hf /uhf band mobile radio sets. rohs compliant rd0 2mu s1 b - 101 ,t112 i s a rohs complian t products. rohs compliance is indicating by the letter ?g? after the lot marking . this product includes the lead in high melting temperature type solders. ho w ever, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders ( i.e.tin - lead solder alloys containing more than85% lead.)
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 2 absolute maximum ratings (tc=25 c unless otherwise noted) symbol paramet er conditions ratings unit vdss drain to source voltage vgs=0v 3 0 v vgss gate to source voltage vds =0v +/ - 20 v pch channel dissipation tc=25 c 21.9 w pin input power zg=zl=50 ? 0.1 w id drain current - 1.5 a tch junction temperature - 150 c tstg sto rage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 5.7 c/w note: above parameters are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min ty p max. i dss drain cutoff current v ds = 17 v, v gs =0v - - 100 u a i gss gate cutoff current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds = 12 v, i ds =1ma 1 1.8 3 v pout 1 output power 2 3 - w ? d 1 drain efficiency v dd = 7.2 v, pin= 50m w, f= 175 mhz idq=200ma 55 65 - % pout 2 output power 2 3 - w ? d 2 drain efficiency v d d = 7.2 v, pin= 50m w, f= 520 mhz idq=200ma 50 65 - % load vswr tolerance v dd =9.2v,po=2w( pin control ) f=175mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2 v,po=2w( pin control ) f=520mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 3 typical characteristics vds vs. ciss characteristics 0 10 20 30 40 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 10 20 30 40 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. crss characteristics 0 1 2 3 4 5 6 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25c f=1mhz vgs-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 vgs(v) i d s ( a ) , g m ( s ) ta=+25c vds=7.2v ids gm vds-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4v vgs=3v vgs=10v channel dissipation vs. ambient temperature 0 5 10 15 20 25 0 40 80 120 160 200 ambient temperature ta(deg:c.) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . on pcb (*1) with through hole and heat-sink on heat-sink *1:the material of the pcb glass epoxy (t=0.8 mm)
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 4 typical characteristics pin-po characteristics @f=175mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 20 30 40 50 60 70 80 90 100 d ( % ) ta=+25c f=175mhz vdd=7.2v idq=200ma po gp pin-po characteristics @f=175mhz 0.0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 pin(mw) p o u t ( w ) , i d d ( a ) 20 40 60 80 100 d ( % ) po d idd ta=25c f=175mhz vdd=7.2v idq=200ma pin-po characteristics @f=520mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 20 30 40 50 60 70 80 90 100 d ( % ) ta=+25c f=520mhz vdd=7.2v idq=200ma po gp pin-po characteristics @f=520mhz 0.0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 pin(mw) p o u t ( w ) , i d d ( a ) 20 40 60 80 100 d ( % ) po d idd ta=25c f=520mhz vdd=7.2v idq=200ma vdd-po characteristics @f=175mhz 0 1 2 3 4 5 6 7 3 5 7 9 11 13 vdd(v) p o ( w ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d d ( a ) po idd ta=25c f=175mhz pin=50mw idq=200ma zg=zi=50 ohm vdd-po characteristics @f=520mhz 0 1 2 3 4 5 6 7 3 5 7 9 11 13 vdd(v) p o ( w ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d d ( a ) po idd ta=25c f=520mhz pin=50mw idq=200ma zg=zi=50 ohm
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 5 test circuit(f=175mhz) 5mm 62pf l1 39pf rf-in l2 3mm 10pf 10pf 4.7k ohm c1 240pf c2 1 0 f , 5 0 v 43pf 13.5mm 3.3mm 6.5mm 19mm 12mm 3mm 680 ohm 3mm 11.5mm l3 5mm 15mm 12mm 5mm 62pf rf-out vgg vdd rd02mus1b 175mhz l1:enameled wire 5 turns,d:0.43mm,2.46mmm o.d l2:enameled wire 3 turns,d:0.43mm,2.46mmm o.d l3:enameled wire 9 turns,d:0.43mm,2.46mmm o.d c 1 , c 2 : 1 0 0 0 p f , 0 . 0 0 2 2 f i n p a r a l l e l note:board material ptfe substrate micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm test circuit(f=520mhz) 62pf 6pf rf-in 26.5m m 4.7k ohm c1 240pf c2 10 f , 50 v 18pf 20mm 19mm 10mm 3mm 680 ohm 11mm l1 4.5m m 19mm 40.5mm 62pf rf-out vgg vdd rd02mus1b 520mhz l1:enameled wire 9 turns,d:0.43mm,2.46mmm o.d c 1 , c 2 : 1000 pf , 0 . 0022 f in parallel note:board material ptfe substrate micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm 43pf 2mm
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 6 input/output impedance vs. frequency characteristics 175mhz zin* 175mhz zout* 175mhz zin* zout* zo=50 ? vdd=7.2v, idq=200ma(vgg adj.),pin=0.05w zin*=11.61+j17.88 zout*=6.83+j5.21 zin*: complex conjugate of input impedance zout*: complex conjugate of input impedance 520mhz zin* zout* zo=50 ? vdd=7.2v, idq=200ma(vgg adj.),pin=0.05w zin*=1.20+j5.47 zout*=5.56+j1.31 zin*: complex conjugate of input impedance zout*: complex conjugate of input impedance 520m hz zin* 520mhz zout* output impedance
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 7 rd02mus1b s-parameter data (@vdd=7.2v, id=200ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.847 -132.5 16.923 100.2 0.042 8.9 0.621 -118.8 135 0.828 -144.6 12.806 90.7 0.042 -0.1 0.598 -130.5 150 0.824 -148.1 11.555 87.5 0.042 -3.3 0.591 -133.7 175 0.817 -152.8 9.864 82.8 0.042 -7.6 0.590 -138.0 200 0.816 -156.2 8.579 78.6 0.041 -11.2 0.594 -141.2 250 0.816 -161.2 6.712 71.2 0.039 -17.6 0.609 -145.5 300 0.820 -164.9 5.436 64.9 0.038 -23.0 0.628 -148.8 350 0.827 -167.6 4.501 59.3 0.036 -28.2 0.653 -151.2 400 0.835 -169.9 3.813 54.0 0.034 -32.2 0.675 -153.5 450 0.844 -171.9 3.257 49.3 0.032 -36.5 0.699 -155.8 500 0.854 -173.6 2.823 44.9 0.031 -39.8 0.723 -157.7 520 0.858 -174.3 2.668 43.1 0.030 -41.1 0.732 -158.4 527 0.859 -174.7 2.613 42.6 0.030 -41.9 0.735 -158.6 550 0.862 -175.3 2.458 40.9 0.029 -43.2 0.743 -159.6 600 0.871 -176.7 2.161 37.1 0.027 -46.6 0.763 -161.5 650 0.878 -178.0 1.911 33.5 0.025 -49.5 0.781 -162.9 700 0.883 -179.4 1.701 30.4 0.024 -51.5 0.798 -164.6 750 0.890 179.4 1.522 27.3 0.022 -54.4 0.811 -166.1 800 0.897 178.3 1.368 24.4 0.021 -56.1 0.824 -167.7 850 0.899 177.0 1.238 21.7 0.019 -58.7 0.836 -169.0 900 0.905 176.0 1.123 19.3 0.018 -59.4 0.845 -170.3 950 0.907 175.1 1.025 17.1 0.016 -60.7 0.853 -171.4 1000 0.913 174.3 0.937 14.9 0.015 -62.1 0.861 -172.5 1050 0.915 173.2 0.859 12.9 0.013 -64.4 0.870 -173.5 1100 0.918 172.6 0.794 11.0 0.012 -64.9 0.874 -174.6 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all righ ts reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give du e consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in th e use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents inf ormation on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi elec tric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubis hi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsu bishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi sem iconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? plea se contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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